tn0201l/0401l, vn0300l/ls vishay siliconix document number: 70199 s-58620erev. d, 21-jun-99 www.siliconix.com faxback 408-970-5600 1 n-channel enhancement-mode mosfet transistors
part number v (br)dss min (v) r ds(on) max ( ) v gs(th) (v) i d (a) tn0201l 20 1.2 @ v gs = 10 v 0.5 to 2 0.64 TN0401L 40 1.2 @ v gs = 10 v 0.5 to 2 0.64 vn0300l 30 1.2 @ v gs = 10 v 0.8 to 2.5 0.64 vn0300ls 30 1.2 @ v gs = 10 v 0.8 to 2.5 0.67 low on-resistance: 0.85 low threshold: 1.4 v low input capacitance: 38 pf fast switching speed: 9 ns low input and output leakage low offset voltage low-voltage operation easily driven without buffer high-speed circuits low error voltage direct logic-level interface: ttl/cmos drivers: relays, solenoids, lamps, hammers, displays, memories, transistors, etc. battery operated systems solid-state relays top view to-226aa (to-92) s d g 1 2 3 to-92s top view s d g 1 2 3 tn0201l TN0401L vn0300l vn0300ls
parameter symbol tn0201l TN0401L vn0300l vn0300ls unit drain-source voltage v ds 20 40 30 30 v gate-source voltage v gs 20 20 30 30 v continuous drain current (t 150 c) t a = 25 c i d 0.64 0.64 0.64 0.67 a (t j = 150 c) t a = 100 c i d 0.38 0.38 0.38 0.43 a pulsed drain current a i dm 1.5 1.5 3 3 power dissipation t a = 25 c p d 0.8 0.8 0.8 0.9 w power dissipation t a = 100 c p d 0.32 0.32 0.32 0.4 w maximum junction-to-ambient r thja 156 156 156 156 c/w operating junction and storage temperature range t j , t stg 55 to 150 c notes a. pulse width limited by maximum junction temperature.
tn0201l/0401l, vn0300l/ls vishay siliconix www.siliconix.com faxback 408-970-5600 2 document number: 70199 s-58620erev. d, 21-jun-99
limits tn0201l TN0401L vn0300l vn0300ls parameter symbol test conditions typ a min max min max unit static dis b kd vl v v0v tn0201l 55 20 v drain-source breakdown voltage v (br)dss v gs = 0 v i d = 10 a TN0401L 55 40 v i d 10 a 30 v gate - threshold v oltage v gs(th) v ds = v gs , i d = 0.25 ma 1.4 0.5 2 gate - threshold v oltage v gs(th) v ds = v gs , i d = 1 ma 1.5 0.8 2.5 gate - body leakage i gss v ds = 0 v, v gs = 20 v 10 na gate - body leakage i gss v ds = 0 v, v gs = 30 v 100 na zgvl dic i v ds = 30 v, v gs = 0 v 10 a zero gate voltage drain current i dss t j = 125 c 500 a zero gate v oltage drain current i dss v ds = 0.8 x v (br)dss , v gs = 0 v 1 a t j = 125 c 100 on - state drain current b i d(on) v ds = 10 v, v gs = 4.5 v 0.9 0.25 a on - state drain current b i d(on) v ds = 10 v, v gs = 10 v 3.5 1 1 a dis or i b v gs = 3.5 v, i d = 0.05 a 1.8 4 dis or i b v gs = 5 v, i d = 0.3 a 1.2 3.3 drain - source on - resistance b r ds(on) v gs = 4.5 v, i d = 0.25 a 1.4 2 drain - source on - resistance b r ds(on) t j = 125 c 2.6 4 v gs = 10 v, i d = 1 a 0.85 1.2 1.2 t j = 125 c 1.6 2.4 forward transconductance b g fs v ds = 10 v, i d = 0.5 a 500 200 200 ms dynamic input capacitance c iss v 15v v 0v f 1mh 38 60 100 f output capacitance c oss v ds = 15 v, v gs = 0 v, f = 1 mhz 33 50 95 pf reverse transfer capacitance c rss 8 15 25 switching c turn-on time t on v dd = 15 v, r l = 14 i d 1 a, v gen = 10 v 10 30 30 ns turn-off time t off i d 1 a , v gen = 10 v r g = 25 13 30 30 ns notes a. for design aid only, not subject to production testing.. vndq03 b. pulse test: pw 300 s duty cycle 2%. c. switching time is essentially independent of operating temperature.
tn0201l/0401l, vn0300l/ls vishay siliconix document number: 70199 s-58620erev. d, 21-jun-99 www.siliconix.com faxback 408-970-5600 3
ohmic region characteristics output characteristics for low gate drive on-resistance vs. drain current normalized on-resistance vs. junction temperature transfer characteristics on-resistance vs. gate-to-source voltage v gs gate-source voltage (v) v gs gate-source voltage (v) drain current (ma) i d drain current (ma) i d drain current (a) i d on-resistance ( r ds(on) v ds drain-to-source voltage (v) v ds drain-to-source voltage (v) i d drain current (a) t j junction temperature ( c) r ds(on) drain-source on-resistance (normalized) 2.0 0123 45 1.6 1.2 0.8 0.4 0 6 v 5 v 4 v 3 v 2 v 7 v t j = 25 c v gs = 10 v 200 0 0.4 0.8 1.2 1.6 2.0 160 120 80 40 0 1.7 v 2.1 v 2.3 v 2.5 v 2.7 v 2.9 v t j = 25 c 500 400 300 0 01 5 200 100 234 125_c 25_c v ds = 15 v t j = 55 c 2.5 2.0 1.5 0 01 1.0 0.5 23 t j = 25 c 0 4 8 12 16 20 3 2 0 1 t j = 25 c 2.25 2.00 1.75 0.50 50 10 150 1.50 1.25 30 70 110 1.00 0.75 i d = 0.5 a 0.1 a 10 v i d = 0.2 a v gs = 4.5 v 6 v 10 v v gs = 10 v r ds(on) drain-source on-resistance ( ) ) 0.5 a 1.0 a
tn0201l/0401l, vn0300l/ls vishay siliconix www.siliconix.com faxback 408-970-5600 4 document number: 70199 s-58620erev. d, 21-jun-99
0.1 1 10 100 10 1 v dd = 25 v r g = 25 v gs = 0 to 10 v t d(on) threshold region capacitance normalized effective transient thermal impedance, junction-to-ambient (to-226aa) gate charge load condition effects on switching normalized effective transient thermal impedance t 1 square wave pulse duration (sec) i d drain current (a) v ds drain-to-source voltage (v) v gs gate-to-source voltage (v) q g total gate charge (pc) drain current (ma) i d c capacitance (pf) gate-to-source voltage (v) v gs t switching time (ns) t d(off) t r t f 10 1 0.6 0.8 2.0 1.0 1.2 1.4 1.6 1.8 v ds = 10 v 55 c 0.1 0.01 t j = 150 c 120 100 80 0 010 50 60 40 20 30 40 20 c iss c rss v gs = 0 v c oss f = 1 mhz 10 k duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse 1 0.01 0.1 0.01 0.1 5 k 1 100 500 10 0.5550 1 k 1. duty cycle, d = 2. per unit base = r thja = 156 c/w 3. t jm t a = p dm z thja (t) t 1 t 2 t 1 notes: p dm t 2 6 5 4 0 0 80 400 3 2 160 240 320 1 i d = 1 a v ds = 15 v 24 v 100 c 25 c
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